Flip Chip Bonder

Manufacturer:  Shinkawa

Model No.:  LFB-2301

Specifications

• Chip-to-Wafer Flip chip bonder for NCF-TCB process
• Capable of high-speed, high-precision flip chip bonding by adopting probe camera technology and linear motor
• High precision control of both bond head force and Z position
• Shinkawa’s NRS technology reduced vibration that obstructs fine pitch bonding
• High throughput achieved by short heating and cooling with pulse heater
• Automatic product-type changeover function with capability to bond up to 4 different product-type chips enables handling of 2.5D and 3D stack packaging
• Capable of handling each plunge-up method and thin die pickup
• Capable of handling 12-inch chip wafer and base wafer
• Molten solder detection function and high-precision Z control reduce damage on devices (under low force mode)
• Process monitoring and management function securing stable quality and process portability

• Bonding Method: Pulse heat thermocompression
• Bonding Accuracy: ±2μm (3σ) by Shinkawa’s standard condition
• Machine Cycle Time: 2.2s/chip (excludes process time) by Shinkawa’s standard condition
• Bonding Force: 1 - 300N
※Capable of selecting bond force control method at bonding process
However, it is not capable of switching over between low force control and high force control in the identical bond profile
・Low force Control mode:1 - 50N in 0.1N increments
・High force Control mode:10 - 300N in 1N increments
• Bonding Tool Setting Temperature: RT - 400℃ (in 1℃ increments pulse heat)
• Bonding Stage Setting Temperature: RT - 150℃ (in 1℃ increments pulse heat)
• Chip Size: □2 - 20mm t=0.05-0.7mm
• Chip Wafer Size: φ200mm, φ300mm
• Base Wafer Size: φ200mm, φ300mm
• Process: NCF-TCB (Option available:NCP-TCB, Flux-TCB )

Flip Chip Bonder

Manufacturer:   Shinkawa

Model No.:   LFB-2301

Specifications

• Chip-to-Wafer Flip chip bonder for NCF-TCB process
• Capable of high-speed, high-precision flip chip bonding by adopting probe camera technology and linear motor
• High precision control of both bond head force and Z position
• Shinkawa’s NRS technology reduced vibration that obstructs fine pitch bonding
• High throughput achieved by short heating and cooling with pulse heater
• Automatic product-type changeover function with capability to bond up to 4 different product-type chips enables handling of 2.5D and 3D stack packaging
• Capable of handling each plunge-up method and thin die pickup
• Capable of handling 12-inch chip wafer and base wafer
• Molten solder detection function and high-precision Z control reduce damage on devices (under low force mode)
• Process monitoring and management function securing stable quality and process portability

• Bonding Method: Pulse heat thermocompression
• Bonding Accuracy: ±2μm (3σ) by Shinkawa’s standard condition
• Machine Cycle Time: 2.2s/chip (excludes process time) by Shinkawa’s standard condition
• Bonding Force: 1 - 300N
※Capable of selecting bond force control method at bonding process
However, it is not capable of switching over between low force control and high force control in the identical bond profile
・Low force Control mode:1 - 50N in 0.1N increments
・High force Control mode:10 - 300N in 1N increments
• Bonding Tool Setting Temperature: RT - 400℃ (in 1℃ increments pulse heat)
• Bonding Stage Setting Temperature: RT - 150℃ (in 1℃ increments pulse heat)
• Chip Size: □2 - 20mm t=0.05-0.7mm
• Chip Wafer Size: φ200mm, φ300mm
• Base Wafer Size: φ200mm, φ300mm
• Process: NCF-TCB (Option available:NCP-TCB, Flux-TCB )

TOP